New origin for spin current and current-induced spin precession in magnetic multilayers
نویسندگان
چکیده
منابع مشابه
New Origin for Spin Current and Current-induced Spin Precession in Magnetic Multilayers
In metallic ferromagnets, an electric current is accompanied by a flux of angular momentum, also called spin current. In multilayers, spatial variations of the spin current correspond to drive torques exerted on a magnetic layer. These torques result in spin precession above a certain current threshold. The usual kind of spin current is associated with translation of the spin-up and spindown Fe...
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In a spin valve with current perpendicular to layers, the electrical resistance with antiparallel magnetic layers differs from the value with parallel layers, by an amount R. Also, above a certain critical value Ic, a dc current induces a precession of the magnetization in the free magnetic layer, through s-d exchange. Using a local mechanism where current-induced torques depend only on the spi...
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Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing frequent collisions and these events lead to a broad distribution of the dwell time in a transport channel between the injector and the detector. Here we sho...
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Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely proportional to the thickness of the ferromagnetic layer, sizable effect has only been realized in bilayers with an ultrathin ferromagnetic layer. Here we demonstrate ...
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Stacks of alternating ferromagnetic and nonmagnetic metal layers exhibit giant magnetoresistance ~GMR!, because their electrical resistance depends strongly on whether the moments of adjacent magnetic layers are parallel or antiparallel. This effect has allowed the development of new kinds of field-sensing and magnetic memory devices. The cause of the GMR effect is that conduction electrons are...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2001
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1365080